Manufacturer:
onsemi
BSS123LT1G
Power MOSFET, N Channel, 100 V, 170 mA, 6 Ohm, SOT-23 (TO-236), 3 Pins, Surface Mount
Avnet Manufacturer Part #:
BSS123LT1G
RoHS 10 Compliant
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularty suited for low-voltage, low-current applications such as small servo motor control. power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.</p>
Key Features
- These Devices are Pb−Free and are RoHS Compliant
Technical Attributes
Find Similar Parts|
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Description | Value |
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Rds(on) Test Voltage | 10 |
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Transistor Case Style | SOT-23 |
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Operating Temperature Max | 150 °C |
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Channel Type | N Channel |
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Drain Source On State Resistance | 6 Ohm |
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Drain Source Voltage Vds | 100 V |
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Continuous Drain Current Id | 170 mA |
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Power Dissipation | 225 mW |
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MSL Level | MSL 1 - Unlimited |
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Gate Source Threshold Voltage Max | 2.6 V |
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No. of Pins | 3 |
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Product Range | BSS123 Series |
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Transistor Mounting | Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |