BC846BDW1T1G by onsemi Bipolar Transistor Arrays | Avnet Asia Pacific

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BC846BDW1T1G

Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 6 Pins, SOT-363

BC846BDW1T1G in Bipolar Transistor Arrays by onsemi
onsemi
Manufacturer: onsemi
Avnet Manufacturer Part #: BC846BDW1T1G
RoHS 10 Compliant

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.

Key Features

  • Collector−Emitter Voltage 65 V
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Technical Attributes

Find Similar Parts
Description Value
Collector Emitter Voltage NPN Max 65 V
Product Range BC846BDW1 Series
No. of Pins 6
Transistor Polarity Dual NPN
Operating Temperature Max 150 °C
DC Current Gain hFE Min NPN 200
Transistor Case Style SOT-363
Transition Frequency NPN 100 MHz
Power Dissipation NPN 380 mW
Continuous Collector Current NPN 100 mA
MSL Level MSL 1 - Unlimited
Transistor Mounting Surface Mount

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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