MT29F32G08ABAAAWP-ITZ:A by Micron Flash Memory | Avnet Asia Pacific

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MT29F32G08ABAAAWP-ITZ:A

Flash Memory, SLC NAND, 32 Gbit, 4G x 8bit, Parallel, 48 Pins, TSOP-I

MT29F32G08ABAAAWP-ITZ:A in Flash Memory by Micron
Micron
Manufacturer: Micron
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MT29F32G08ABAAAWP-ITZ:A
RoHS 10 Compliant

NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F16G is a 16Gb NAND Flash memory device. The MT29F32G is a two-die stack that operates as two independent 16Gb devices. The MT29F64G is a four-die stack that operates as two independent 32Gb devices, providing a total storage capacity of 64Gb in a single, space-saving package. MT29F128G is a eight die stack that operates as four independent 32Gb devices, providing a total storage capacity of 128Gb in a single, space-saving package. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance. Micron NAND Flash devices use a highly multiplexed 8-bit bus (I/O[7:0]) to transfer data, addresses, and instructions. The five command pins (CLE, ALE, CE#, RE#, WE#) implement the NAND Flash command bus interface protocol. Two additional pins control hardware write protection (WP#) and monitor device status (R/B#). This hardware interface creates a low-pin-count device with a standard pinout that is the same from one density to another, allowing future upgrades to higher densities without board redesign. The MT29F16G, MT29F32G, MT29F64G, and MT29F128G devices contain two planes per die, for a total of two or four planes per CE#. Each plane consists of 2,048 blocks. Each block is subdivided into 128 programmable pages. Each page consists of 4,314 bytes. The pages are further divided into a 4,096-byte data storage region with a separate 218-byte area. The 218-byte area is typically used for error management functions. The contents of each page can be programmed in t PROG, and an entire block can be erased in t BERS. On-chip control logic automates PROGRAM and ERASE operations to maximize cycle endurance. PROGRAM/ERASE endurance is specified at 10,000 cycles when using appropriate error correction code (ECC) and error management. The MT29F8G, MT29F16G, MT29F16G, MT29F32G, and MT9F64G are ONFI 1.0-compliant devices.

Key Features

  • Open NAND Flash Interface (ONFI) 1.0 compliant
  • Multilevel cell (MLC) technology
  • Organization
    • Page size: x8: 4,314 bytes (4,096 + 218 bytes)
    • Block size:128 pages (512K + 27K bytes)
    • Plane size: 2,048 blocks
    • Device size: 16Gb: 4,096 blocks; 32Gb: 8,192 blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks
  • READ performance
    • Random READ: 50µs
    • Sequential READ: 25ns
  • WRITE performance
    • PROGRAM PAGE: 900µs (TYP)
    • BLOCK ERASE: 3.5ms (TYP)
  • Endurance
    • 10,000 PROGRAM/ERASE cycles (8-bit ECC1)
  • Data retention: 10 years
  • First block (block address 00h) guaranteed to be valid when shipped from factory1
  • Industry-standard basic NAND Flash command set
  • Advanced command set
    • PROGRAM PAGE CACHE MODE
    • PAGE READ CACHE MODE
    • One-time programmable (OTP) commands
    • Two-plane commands
    • Interleaved die operations
    • READ UNIQUE ID (contact factory)
  • Operation status byte provides a software method of detecting:
    • Operation completion
    • Pass/fail condition
    • Write-protect status
  • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion
  • WP# signal: entire device hardware write protect
  • RESET required after power-up
  • INTERNAL DATA MOVE operations supported within the plane from which data is read

Technical Attributes

Find Similar Parts
Description Value
Access Time 100 ns
Clock Frequency Max 100 MHz
Memory Density 32 Gbit
Memory Configuration 4G x 8bit
Interfaces Parallel
IC Case / Package TSOP-I
No. of Pins 48
Product Range 3.3V SLC NAND Flash Memories
Operating Temperature Min -40 °C
IC Mounting Surface Mount
Flash Memory Type SLC NAND
Operating Temperature Max 85 °C
Supply Voltage Max 3.6 V
Supply Voltage Min 2.7 V
Supply Voltage Nom 3.3 V

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.1.a
SCHEDULE B: PARTS...
HTSN: PARTS...

Documents

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Documents

Title Download Type Date Published
MIC4-MIC_31901 PCN EOL-Documentation 20160109
MIC4-PCN_31901 PCN EOL-Documentation 20160109
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