MT25QU256ABA8E12-1SIT by Micron Flash Memory | Avnet Asia Pacific

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MT25QU256ABA8E12-1SIT

NOR Flash Serial-SPI 3.3V 256Mbit 256M x 1bit 24-Pin TBGA

MT25QU256ABA8E12-1SIT in Flash Memory by Micron
Micron
Manufacturer: Micron
Product Category: Memory, Flash Memory
Avnet Manufacturer Part #: MT25QU256ABA8E12-1SIT
RoHS 10 Compliant
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The MT25Q is a high-performance multiple input/output serial Flash memory device manufactured on 45nm NOR technology. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/ output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

Key Features

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR)
  • Clock frequency
    • 133 MHz (MAX) for all protocols in STR
    • 66 MHz (MAX) for all protocols in DTR
  • Dual/quad I/O commands for increased throughput up to 65 MB/s
  • Supported protocols in both STR and DTR
    • Extended I/O protocol
    • Dual I/O protocol
    • Quad I/O protocol
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset
  • Additional reset pin for selected part numbers
  • 3-byte and 4-byte address modes -- enable memory access beyond 128Mb
  • Dedicated 64-byte OTP area outside main memory
    • Readable and user-lockable
    • Permanent lock with PROGRAM OTP command
  • Erase capability
    • Bulk erase
    • Sector erase 64KB uniform granularity
    • Subsector erase 4KB, 32KB granularity
  • Security and write protection
    • Volatile and nonvolatile locking and software write protection for each 64KB sector
    • Nonvolatile configuration locking
    • Password protection
    • Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
    • Program/erase protection during power-up
    • CRC detects accidental changes to raw data
  • Electronic signature
    • JEDEC-standard 3-byte signature (BA20h)
    • Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    • Minimum 100,000 ERASE cycles per sector
    • Data retention: 20 years (TYP)

Technical Attributes

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Description Value
Operating Temperature Max 85 °C
Clock Frequency Max 166 MHz
Supply Voltage Min 1.7 V
Supply Voltage Max 2 V
Supply Voltage Nom 1.8 V
Memory Density 256 Mbit
IC Mounting Surface Mount
IC Case / Package TBGA
Interfaces SPI
Access Time 6 ns
Operating Temperature Min -40 °C
Flash Memory Type NOR
No. of Pins 24

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.1.a
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