IS66WVE4M16EBLL-70BLI by ISSI SRAMs | Avnet Asia Pacific

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IS66WVE4M16EBLL-70BLI

SRAM, Pseudo SRAM, 64 Mbit, 4M x 16bit, TFBGA, 48 Pins, 2.7 V

IS66WVE4M16EBLL-70BLI in SRAMs by ISSI
ISSI
Manufacturer: ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS66WVE4M16EBLL-70BLI
RoHS 10 Compliant

IS66WVE4M16EBLL-70BLI is a 64Mb async/page PSRAM. It is an integrated memory device containing 64Mbit pseudo static random access memory using a self-refresh DRAM array organized as 4M words by 16bits. The device includes several power saving modes : partial array refresh mode where data is retained in a portion of the array and deep power down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. It include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous memory bus, PSRAM products incorporated a transparent self-refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device read/write performance.

Key Features

  • Dual voltage rails for optional performance, VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
  • 4Mx16 configuration, 70ns speed
  • Asynchronous operation is 30mA, intrapage read is 23mA
  • Standby is 200uA (max.) at -40°C~85°C, deep power-down (DPD) is 10µA (typ)
  • Temperature controlled refresh, partial array refresh, deep power-down (DPD) mode
  • 48-ball TFBGA package
  • Industrial temperature rating range from -40°C to +85°C

Technical Attributes

Find Similar Parts
Description Value
Supply Voltage Nom 3.3, 3.3 V
Supply Voltage Max 3.6 V
Supply Voltage Min 2.7 V
No. of Pins 48
Operating Temperature Max 85 °C
IC Mounting Surface Mount
IC Case / Package TFBGA
Operating Temperature Min -40 °C
Memory Density 64 Mbit

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.2.a
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