IS61WV25616EDBLL-8BLI by ISSI SRAMs | Avnet Asia Pacific

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IS61WV25616EDBLL-8BLI

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 8ns 48-Pin TFBGA

IS61WV25616EDBLL-8BLI in SRAMs by ISSI
ISSI
Manufacturer: ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS61WV25616EDBLL-8BLI
RoHS 6 Compliant

The ISSI IS61WV25616EDBLL is a high-speed,4,194,304-bit static RAMs organized as 262,144 wordsby 16 bits. It is fabricated using ISSI's high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices. When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE and OE. The active LOWWrite Enable (WE) controls both writing and reading of thememory. A data byte allows Upper Byte (UB) and LowerByte (LB) access. The IS61WV25616EDBLL is packaged in the JEDECstandard 44-pin TSOP-II and 48-pin Mini BGA (6mm x8mm).

Key Features

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby
  • Single power supply
    • Vdd 2.4V to 3.6V (10 ns)
    • Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available
  • Error Detection and Error Correction

Technical Attributes

Find Similar Parts
Description Value
Supply Voltage Min 2.4 V
Supply Voltage Nom 3.3 V
Operating Temperature Max 85 °C
Operating Temperature Min -40 °C
Supply Voltage Max 3.6 V
Memory Density 4 Mbit
IC Case / Package TFBGA
IC Mounting Surface Mount
No. of Pins 48

ECCN / UNSPSC / COO

Description Value
ECCN: 3A991.b.2.a
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