IS61LPS25636A-200TQLI by ISSI SRAMs | Avnet Asia Pacific

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IS61LPS25636A-200TQLI

SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP

IS61LPS25636A-200TQLI in SRAMs by ISSI
ISSI
Manufacturer: ISSI
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: IS61LPS25636A-200TQLI
RoHS 6 Compliant

The ISSI IS61LPS25636A is a highspeed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS25636A is organized as 262,144 words by 36 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAMcore, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs.

Key Features

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth expansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Single cycle deselect
  • Snooze MODE for reduced-power standby
  • JTAG Boundary Scan for BGA package
  • Power Supply LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
  • JEDEC 100-Pin QFP, 119-ball BGA, and 165-ball BGA packages
  • Lead-free available

Technical Attributes

Find Similar Parts
Description Value
No. of Pins 100
SRAM Type SDR
Operating Temperature Min -40 °C
IC Case / Package TQFP
IC Mounting Surface Mount
Clock Frequency Max 200 MHz
Memory Density 9 Mbit
Supply Voltage Max 3.465 V
Operating Temperature Max 85 °C
Supply Voltage Min 3.135 V
Supply Voltage Nom 3.3 V

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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