Manufacturer:
ISSI
IS43TR16256BL-125KBLI
DRAM, DDR3L, 4 Gbit, 256M x 16bit, 800 MHz, BGA, 96 Pins
Avnet Manufacturer Part #:
IS43TR16256BL-125KBLI
RoHS 10 Compliant
IS43TR16256BL-125KBLI is a 1600MT/s 256Mx16 4Gb DDR3 SDRAM. The memory controller initiates levelling mode of all DRAMs by setting bit 7 of MR1 to 1. When entering write levelling mode, the DQ pins are in undefined driving mode. During write levelling mode, only NOP or DESELECT commands are allowed, as well as an MRS command to exit write levelling mode. The controller may drive DQS low and DQS# high after a delay of tWLDQSEN, at which time the DRAM has applied on-die termination on these signals. After tDQSL and tWLMRD, the controller provides a single DQS, DQS# edge which is used by the DRAM to sample CK - CK# driven from controller.
Key Features
- Standard voltage is VDD and VDDQ = 1.5V ± 0.075V
- High-speed data transfer rates with system frequency up to 1066MHz
- 8 internal banks for concurrent operation, 8n-bit pre-fetch architecture
- Programmable CAS latency, programmable additive latency: 0, CL-1, CL-2
- Programmable CAS WRITE latency (CWL) based on tCK, programmable burst length: 4 and 8
- Programmable burst sequence: sequential or interleave, BL switch on the fly
- Auto self refresh(ASR), self refresh temperature (SRT)
- Partial array self-refresh, the asynchronous RESET pin, write levelling
- 96-ball BGA package
- Industrial rating range from -40°C ≤ TC ≤ 95°C
Technical Attributes
Find Similar Parts|
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Description | Value |
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Operating Temperature Max | 95 °C |
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Supply Voltage Nom | 1.35 V |
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Memory Density | 4 Gbit |
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Operating Temperature Min | -40 °C |
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Clock Frequency Max | 800 MHz |
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No. of Pins | 96 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8542320050 |
| HTSN: | 8542320036 |