Manufacturer:
ISSI
IS43DR86400E-25DBLI
DRAM Chip DDR2 SDRAM 512M-Bit 64Mx8 1.8V 60-Pin TWBGA
Avnet Manufacturer Part #:
IS43DR86400E-25DBLI
RoHS 10 Compliant
IS43DR86400E 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.
Key Features
- Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, and 6 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
- WRITE latency = READ latency - 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
- Configuration(s): 64Mx8 (16Mx8x4 banks) IS43DR86400E
- Package: x8: 60-ball BGA (8mm x 10.5mm)
- Timing – Cycle time
- 2.5ns @CL=5 DDR2-800D
- 2.5ns @CL=6 DDR2-800E
- 3.0ns @CL=5 DDR2-667D
- 3.75ns @CL=4 DDR2-533C
- 5ns @CL=3 DDR2-400B
- Temperature Range:
- Commercial (0°C ≤ Tc ≤ 85°C)
- Industrial (-40°C ≤ Tc ≤ 95°C; -40°C ≤ Ta ≤ 85°C)
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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DRAM Type | DDR2 SDRAM |
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IC Mounting | Surface Mount |
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Memory Configuration | 64M x 8 |
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Memory Density | 512 Mbit |
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Supply Voltage Nom | 1.8 V |
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Operating Temperature Max | 85 °C |
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Operating Temperature Min | -40 °C |
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No. of Pins | 60 |
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IC Case / Package | TWBGA |
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Clock Frequency Max | 400 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | PARTS... |
| HTSN: | PARTS... |