Manufacturer:
Gsi Technology
GS816118DGD-200
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA
Avnet Manufacturer Part #:
GS816118DGD-200
RoHS 10 Compliant
The GS816118D is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Key Features
- FT pin for user-configurable flow through or pipeline operation
- Single Cycle Deselect (SCD) operation
- IEEE 1149.1 JTAG-compatible Boundary Scan
- 2.5 V or 3.3 V +10%/–10% core power supply
- 2.5 V or 3.3 V I/O supply
- LBO pin for Linear or Interleaved Burst mode
- Internal input resistors on mode pins allow floating mode pins
- Default to Interleaved Pipeline mode
- Byte Write (BW) and/or Global Write (GW) operation
- Internal self-timed write cycle
- Automatic power-down for portable applications
- JEDEC-standard 100-lead TQFP and 165-bump BGA packages
- 1MB product Family
- 13 mm x 15 mm, 165 FPBGA
- Default to SCD x18 Interleaved Pipeline mode
Technical Attributes
Find Similar Parts|
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Description | Value |
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Operating Temperature Max | 70 °C |
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SRAM Type | Synchronous SRAM |
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Supply Voltage Max | 2.7, 3.6 V |
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Memory Configuration | 1M x 18bit |
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Memory Density | 18 Mbit |
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Supply Voltage Nom | 2.5, 3.3 V |
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Clock Frequency Max | 200 MHz |
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IC Mounting | Surface Mount |
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IC Case / Package | FBGA |
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Operating Temperature Min | 0 °C |
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No. of Pins | 165 |
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Supply Voltage Min | 2.3, 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | 3A991.b.2.b |
| SCHEDULE B: | 8542320040 |
| HTSN: | 8542320041 |