MMBT4403-7-F by Diodes Incorporated Single Bipolar Transistors | Avnet Asia Pacific

Inactivity Warning Dialog

Your session is about to timeout due to inactivity. Click OK to extend your time for an additional 30 minutes.

MMBT4403-7-F

Single Bipolar Transistor, PNP, 40 V, 600 mA, 350 mW, SOT-23, 3 Pins, Surface Mount

MMBT4403-7-F in Single Bipolar Transistors by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: MMBT4403-7-F
RoHS 10 Exempt

MMBT4403-7-F is a 40V PNP, small signal transistor. It features epitaxial planar die construction. It is ideal for medium power amplification and switching.

Key Features

  • Collector cut-off current is -100nA maximum at (VCE = -35V, VEB(off) = -0.4V)
  • Collector-emitter saturation voltage is -0.40V maximum at (IC = -150mA, IB = -15mA)
  • Input capacitance is 30pF maximum at (VEB = -0.5V, f = 1.0MHz, IC = 0)
  • Input impedance is 15Kohm maximum at (VCE = -10V, IC = -1mA, f = 1KHz)
  • Current gain-bandwidth product is 200MHz minimum at (VCE = -10V, IC = -20mA, f = 100MHz)
  • Delay time is 15ns maximum at (VCC = -30V, IC = -150mA, VBE(off) = -2V, IB1 = -15mA)
  • Rise time is 20ns maximum at (VCC = -30V, IC = -150mA, VBE(off) = -2V, IB1 = -15mA)
  • Fall time is 30ns maximum at (VCC = -30V, IC = -150mA, IB1 = -IB2 = -15mA)
  • Collector-base breakdown voltage is -40V minimum at (IC = -100µA, TA = +25°C)
  • Operating temperature range from -55°C to +150°C, SOT23 package

Technical Attributes

Find Similar Parts
Description Value
Collector Emitter Voltage Max 40 V
Operating Temperature Max 150 °C
DC Current Gain hFE Min 100
Transistor Polarity PNP
Transistor Mounting Surface Mount
Transistor Case Style SOT-23
Product Range MMBT4403 Series
Power Dissipation 350 mW
Continuous Collector Current 600 mA
Transition Frequency 200 MHz
No. of Pins 3

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
SCHEDULE B: PARTS...
HTSN: PARTS...
CLEAR ALL Compare (0/10)