ZX5T851GTA by Diodes Incorporated Single Bipolar Transistors | Avnet Asia Pacific

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ZX5T851GTA

Trans GP BJT NPN 60V 6A 4-Pin(3+Tab) SOT-223 T/R

ZX5T851GTA in Single Bipolar Transistors by Diodes Incorporated
Diodes Incorporated
Manufacturer: Diodes Incorporated
Avnet Manufacturer Part #: ZX5T851GTA
RoHS 10 Exempt

Trans GP BJT NPN 60V 6A 4-Pin(3+Tab) SOT-223 T/R

Key Features

  • BVCEO > 60V
  • IC = 6A High Continuous Collector Current
  • ICM = 20A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < -60mV @ -1A
  • RSAT = 35mΩ for a Low Equivalent on-Resistance
  • hFE Specified up to 10A for a High Gain Hold-Up
  • Complementary PNP Type: ZX5T951G
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Technical Attributes

Find Similar Parts
Description Value
No. of Pins 4
Operating Temperature Max 150
DC Current Gain hFE Min 100
Transistor Case Style SOT-223
Power Dissipation 3
Transistor Polarity NPN
Transition Frequency 130
Transistor Mounting Surface Mount
Collector Emitter Voltage Max 60
MSL Level MSL 1 - Unlimited
Continuous Collector Current 6

ECCN / UNSPSC / COO

Description Value
ECCN: EAR99
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Documents

Title Download Type Date Published
DIO-PCN-2235REV00 PCN Other-Documents 20160109
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