Manufacturer:
Ampleon
BLF888AS,112
Transistor RF FET N-CH 110V 470MHz to 860MHz 5-Pin SOT-539B Bulk
Avnet Manufacturer Part #:
BLF888AS,112
RoHS 6 Compliant
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Key Features
- Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
- Suitable for CW UHF and ISM applications
- High power gain
- High efficiency
- Designed for broadband operation (470 MHz to 860 MHz)
- Internal input matching for high gain and optimum broadband operation
- Excellent reliability
- Easy power control
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 225 |
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Transistor Case Style | SOT-539B |
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Drain Source Voltage Vds | 110 |
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No. of Pins | 5 |
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Transistor Mounting | Flange Mount |
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Channel Type | N |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541290080 |
| HTSN: | 8541290095 |