RY7P250BM Ultra-Low RDS(on) N-ch MOSFET
for High-Efficiency Power Management
The RY7P250BM is an ultra-low RDS(on) N-channel MOSFET optimized for high-efficiency power management in compact systems. Its 2.4×1.9mm package reduces board space while achieving low conduction loss, making it ideal for battery-driven, IoT, and sustainable energy-focused applications.
・Optimized for Hot Swap Controller (HSC) and power switching applications
・30V N-ch MOSFET with ultra-low 2.5mΩ RDS(on)
・Compact 2.4×1.9mm package supporting high-efficiency, miniaturized design
Features
- Low on - resistance
- High power package(DFN8080)
- Pb-free plating ; RoHS compliant
- Halogen Free
- 100% Rg and UIS tested
- Wide- SOA
Applications
- Hot Swap Controller (HSC) circuits
- Battery-powered devices
- IoT / portable electronics
- High-efficiency DC-DC conversion
- Energy-conscious consumer devices
Video
Video link:https://youtu.be/egDiTPzVqKw
