This solution is a high-current EFUSE solution, designed based on Infineon's high-side driver 2ED2410, with the main control platform being CY2B75 and a current rating of 300A.
It is applicable to scenarios such as domain control or PDU primary distribution and 12V lithium battery switch protection, replacing traditional fuses and relays. When a fault occurs, it can quickly cut off the load and effectively protect the wiring harness at the same time.
Features
- 1-channel device with two high-side gate driver outputs;
- 3 Ω pull-down and 50 Ω pull-up for fast turn-on/turn-off of the switch;
- Supports back-to-back MOSFET topology (common drain and common source);
- Two bidirectional high-side analog current sense interfaces with externally adjustable gain;
- Adjustable overcurrent and short-circuit protection;
- Integrated multi-function comparator: configurable I-t curve protection, overvoltage/undervoltage or overtemperature protection.
Key components
- 2ED2410 --- high-side gate driver
- CY2B75 --- MCU
- IAUAN04S7N005 --- MOSFET
- TLE9461---SBC
Applications
- Power Distribution Unit
Benefits
- Short-circuit protection: When the detected current reaches the designed threshold, the chip triggers fast protection and shuts down the output, with the whole process completed within microsecond level.
- I-t protection: When the actual current hits the configured value, the chip activates protection following the RC filter time constant design. The actual tested protection time is within the designed range.
- Quiescent current test: On the current evaluation board, the quiescent power consumption is about 125 μA when DG1/DG0 are left floating, and around 165 μA when the pins are connected.
- Software design: Developed based on CY2B75, it supports pre-charge and protection functions. Real-time sampling is implemented via ADC ports with configurable protection current threshold. Verified by tests, it can protect the system in real time and serve as a redundant design.
- Thermal design: Compatible with both heat sink mounting and copper plate heat dissipation schemes, allowing flexible configuration according to customer application conditions.
- Temperature rise test: Since the test condition of 300A (four devices in parallel) is not available at present, a test with two devices in parallel at 140A was conducted. The short-term temperature rise is around 60 ℃.
Block diagram

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