As electric-mobility becomes an increasing part of our daily lives, the demand for more efficient charging solutions grows too. Fast-charging stations for electric vehicles (EV) equipped with powerful DC chargers are becoming more attractive. Compared to the AC chargers many EV owners have at home, DC chargers enable much faster charging. Today, a 150 kW DC charging station can charge an EV in only about 15 minutes for a range of 200 km. As battery technologies and fast charging improve, experts predict charging time will decrease even further.
Still, developing a successful DC EV charging power supply can be challenging. Designs must increase output power to reduce charging time, increase power density within the dimensions of a charging station, increase efficiency by increasing loads and reduce power dissipation. With high-quality components and solutions from a single source as well as comprehensive application and technology know-how, Infineon enables you to meet all challenges in the design of fast EV chargers. Infineon’s broad portfolio covers power ranges from kilowatts to megawatts and includes power semiconductors, gate drivers, microcontrollers, and authentication solutions.
Get Whitepaper: Realizing the future of fast EV Charging through CoolSiC™ based topology design
While consumers are keen to reduce their carbon footprint, the move to E-Mobility, especially private electric vehicles (EV), is hindered by the limited charging infrastructure, most notably in fast charging.
This white paper reviews the charging landscape and examines implementation approaches for fast DC chargers. Specific focus is placed on chargers delivering 350 kW and more for fast electrical “refueling”. And examines the role SiC power semiconductor devices and other supporting technologies in the Infineon portfolio offer in such applications.
- CoolSiC™
- AURIX™
- EiceDRIVER™
- CoolMos™
- Sensor
- Security
EasyDUAL™ 1B Half-bridge 1200 V module with CoolSiC™ MOSFET
EasyDUAL™ 1B 1200 V, 11 mΩ half-bridge module with CoolSiC™ MOSFET, NTC, pre-applied Thermal Interface Material and PressFIT Contact Technology.
New generation M1H product FF8MR12W1M1HP_B11 coming soon.
EasyDUAL™ 2B Half-bridge 1200 V CoolSiC™ MOSFET Module
EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module with CoolSiC™ MOSFET, NTC temperature sensor, PressFIT contact technology and pre-applied Thermal Interface Material.
EasyDUAL™ 3B Half-bridge 1200 V CoolSiC™ MOSFET Easy Module
EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology.
Half-bridge 1200 V CoolSiC™ MOSFET Module
62 mm 1200 V, 2 mΩ half-bridge module with CoolSiC™ MOSFET with pre-applied Thermal Interface Material.
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package
CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
CoolSiC™ MOSFET 650 V
650 V CoolSiC™ MOSFETs offer optimized switching behaviors at high currents and low capacitances
CoolSiC™ Schottky diode 650 V
Infineon's CoolSiC™ Schottky diodes 650 V deliver high price and efficiency performance.
AURIX™ 32-bit Microcontroller based on TriCore™
Embedded safety and security features and is the ideal platform for a wide range of automotive and industrial applications.
EiceDRIVER™ 2EDi
Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing
EiceDRIVER™ 1EDB
Single-channel gate-driver IC supporting an input-to-output isolation with high system level effciencies
EiceDRIVER™ X3 Compact
Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clamp or separate output
EiceDRIVER™ Compact Isolated Gate Driver
Galvanically isolated single channel IGBT driver in a PGDSO-8-51 package that provides minimum peak output currents up to 3 A and an integrated active Miller clamp circuit with the same current rating to protect against parasitic turn on.
EiceDRIVER™ Enhanced Isolated Gate Driver
Single-channel 5.7 kV (rms) isolated gate driver IC with adjustable DESAT and soft-off
650 V CoolMOS™ CFD7
CoolMOS™ superjunction high-voltage MOSFET improved full-load efficiency
600 V CoolMOS™ P7
Lowest switching losses at fast switching speed is the perfect combination between high efficiency and ease of use
XENSIV™ TLI4971 magnetic current sensor
High precision miniature coreless magnetic current sensor for AC and DC measurements with analog interface with two fast over-current detection outputs in 8x8mm SMD package.
OPTIGA™ TPM SLB 9673 FW26
Ready-to-use TPM optimized for embedded systems featuring I2C interface and PQC-protected firmware update mechanism.