WG30R140W1Q
-
RoHS 10 Compliant -
Tariff Charges
- Reverse conducting IGBT with monolithic body diode
- Low conduction losses, EMI improved design
- Positive temperature efficient for easy parallel operating
- Collector-emitter breakdown voltage is 1400V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2V typ at VGE = 0V; IF = 30A; Tj = 25°C
- Zero gate voltage collector current is 100µA max at VCE = 1400V; VGE = 0V; Tj = 25°C
- Gate charge is 153nC typ at VCC = 1120V; IC = 30A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 129nS typ at Tj=25°C;IC=30A; VGE=15V / 0V; RG=10 ohm;Cr=300nF; R=2ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.8 V | ||
| 1.4 kV | ||
| 60 A | ||
| 3 Pins | ||
| 175 °C | ||
| null | ||
| null | ||
| null | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
Factory Lead Time: