SI4477DY-T1-GE3
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- Compliant to RoHS Directive 2002/95/EC
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 26.6 | ||
| 6.2 mOhm | ||
| 20 | ||
| 1.5 | ||
| 8 | ||
| 150 °C | ||
| 6.6 | ||
| SOIC | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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