DG303BDY-T1-E3

DG303BDY-T1-E3 is a CMOS analogue switch. Designed on the Vishay Siliconix PLUS-40 CMOS process, this switch is latch-up proof and is designed to block upto 30V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5mW typ.) this switch is ideal for battery-powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi-TTL compatible. Single supply operation is allowed by connecting the V-rail to 0V. It is used in applications such as low-level switching circuits, programmable gain amplifiers, and portable and battery-powered systems.

• Full rail-to-rail analogue signal range, low signal error, low power dissipation
• Single supply operation, latch-up proof, CMOS compatible
• Analog signal range is ±15V, drain-source on-resistance is 30 ohm typical
• Source off leakage current is ±0.1nA typical at (VS = ±14V, VD = ±14V)
• Drain off leakage current is ±0.1nA typical at (VS = ±14V, VD = ±14V)
• Turn-on time is 150ns typical at (V+ = 15V, V- = - 15V, VIN = 0.8V or VIN = 4V)
• Turn-off time is 130ns typical at (V+ = 15V, V- = - 15V, VIN = 0.8V or VIN = 4V)
• Charge injection is 8pC typical at (CL = 1nF, Rgen = 0 ohm, Vgen = 0V)
• Off isolation is 62dB typical at (VIN = 0V, RL = 1Kohm, VS = 1Vrms, f = 500KHz)
• Operating temperature range from -40°C to 85°C, 14-SOIC package