NTJD4105CT1G
Complementary Small Signal MOSFET
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
- Complementary N and P channel device
- Leading -8V trench for low RDS(on) performance
- ESD protected gate- Class 1 ESD rating
- 460°C/W Thermal resistance, junction to ambient
Technical Attributes
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| Description | Value | |
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| Complementary | ||
| 0.63 | ||
| 0.775 | ||
| 375 | ||
| 300 | ||
| 20 | ||
| 8 | ||
| 6 | ||
| 150 °C | ||
| 550 | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
Factory Lead Time: