NTH4L032N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules
Avnet Manufacturer Part #: NTH4L032N065M3S
Secondary Manufacturer Part#: NTH4L032N065M3S
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RoHS 10 Compliant -
Tariff Charges
NTH4L032N065M3S is a 650V M3S planar SiC MOSFET in a 4 pin TO-247 package. It is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. Typical applications include SMPS, solar inverters, UPS, energy storages, EV charging infrastructure.
- Drain to source voltage is 650V, maximum drain current is 50A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 114pF)
- 100% avalanche tested
- Operating junction temperature range from -55 to +175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 50 A | ||
| 44 mOhm | ||
| 650 V | ||
| 4 V | ||
| Single | ||
| 4 | ||
| 175 °C | ||
| 187 W | ||
| 18 V | ||
| TO-247 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | null |
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