NTH4L022N120M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
- RoHS 10 Compliant
- Tariff Charges
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 89 A | ||
| 30 mOhm | ||
| 1.2 kV | ||
| 4.4 V | ||
| Single | ||
| 4 | ||
| 175 °C | ||
| 348 W | ||
| TO-247 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | null |