NSVMUN5211DW1T3G
Dual NPN Bipolar Digital Transistor (BRT). ONSSPCTRNSTME1D1N;
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Technical Attributes
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| Description | Value | |
|---|---|---|
| 10 | ||
| 10 kOhm | ||
| 50 | ||
| 100 | ||
| 35 | ||
| 6 | ||
| 150 °C | ||
| 385 | ||
| MUN5211DW1 Ser | ||
| AEC-Q101 | ||
| SOT-363 | ||
| Surface Mount | ||
| Dual NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | null |
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