NGTB40N120FL3WG
IGBT, Ultra Field Stop -1200V 40A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb-Free Devices
Technical Attributes
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| Description | Value | |
|---|---|---|
| 1.7 V | ||
| 1.2 kV | ||
| 80 | ||
| 3 | ||
| 175 °C | ||
| 454 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |
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