NDS0610
P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10O
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 120 mA | ||
| 10 Ohm | ||
| 60 V | ||
| 3.5 V | ||
| 3 | ||
| 150 °C | ||
| 360 mW | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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