NCV5703DDR2G
IGBT Gate Drivers, High-Current, Stand-Alone
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Manufacturer:onsemi
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: NCV5703DDR2G
Secondary Manufacturer Part#: NCV5703DDR2G
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RoHS 10 Compliant -
Tariff Charges
NCV5703DDR2G is a high-current IGBT gate driver. It is a high-current, high-performance stand-alone IGBT driver for high-power applications that include solar inverters, motor control, and uninterruptible power supplies. This device offers a cost-effective solution by eliminating external output buffers. Device protection features include accurate under-voltage-lockout (UVLO), desaturation protection (DESAT), and active open-drain FAULT output. This driver also features an accurate 5V output. It is used in applications such as solar inverters, motor control, uninterruptible power supplies (UPS), and rapid shutdown for photovoltaic systems.
- Low output impedance for enhanced IGBT driving, short propagation delay with accurate matching
- DESAT protection with programmable delay, tight UVLO thresholds for bias flexibility
- Wide bias voltage range, AEC-Q100 qualified and PPAP capable
- Enable pin for independent driver control, input pulse width is 40ns minimum
- Turn-on delay is 59ns typical at (negative input pulse width = 10µs)
- Turn-off delay is 54ns typical at (positive input pulse width = 10µs)
- Peak driver current, sink is 7.2A typical at (RG = 0.1, VCC = 15V, VO = 13V, VO = 9V)
- Rise time is 9.2ns typical at (Cload = 1.0nF, TA = 25°C)
- Ambient temperature range from -40°C to +125°C
- SOIC-8 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Half Bridge | ||
| High and Low Side | ||
| Non-Isolated | ||
| NSOIC | ||
| Surface Mount | ||
| 59 ns | ||
| Non-Inverting | ||
| 260 °C | ||
| 30 ns | ||
| 36 V | ||
| 700 mW | ||
| 15 ns | ||
| 30 ns | ||
| 54 ns | ||
| 59 ns | ||
| 0 V | ||
| Surface Mount | ||
| 1 | ||
| 1 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| 0.9 mA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 54 ns | ||
| 8SOIC | ||
| 6|4 A | ||
| 8 | ||
| IGBT | ||
| 5 x 4 x 1.5 mm | ||
| AEC-Q100 | ||
| No | ||
| 5 V | ||
| Extended Industrial | ||
| 6 A | ||
| 4 A | ||
| SOIC | ||
| 20 V | ||
| 15 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | null |
Factory Lead Time: