NCV51511PDR2G

The NCV51511 is high side and low side gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 80 V. The NCV51511 integrates a driver IC and a bootstrap diode. The driver IC features low delay time and matched PWM input propagation delays, which further enhance the performance of the part. The high speed dual gate drivers are designed to drive both the high-side and low-side of N-Channel MOSFETs in a half bridge or synchronous buck configuration. The floating high-side driver is capable of operating with supply voltages of up to 80 V. In the dual gate driver, the high side and low side each have independent inputs to allow maximum flexibility of input control signals in the application. The PWM input signal (high level) can be 3.3 V, 5 V or up to VDD logic input to cover all possible applications. The bootstrap diode for the high-side driver bias supply is integrated in the chip. The high-side driver is referenced to the switch node (HS) which is typically the source pin of the high-side MOSFET and drain pin of the low-side MOSFET. The low-side driver is referenced to VSS which is typically ground. The functions contained are the input stages, UVLO protection, level shift, bootstrap diode, and output driver stages.