MMBT489LT1G
High Current NPN Bipolar Transistor. ONSSPCTRNSTRN4B6U;
- RoHS 10 Compliant
- Tariff Charges
MMBT489LT1G is a high current surface mount PNP silicon switching transistor for load management in portable applications.
- Collector-emitter voltage is 30VDC max (TA = 25°C)
- Collector-base voltage is 50VDC max (TA = 25°C)
- Emitter-base voltage is 5.0VDC max (TA = 25°C)
- Collector current - continuous is 1.0ADC max (TA = 25°C)
- Collector current - peak is -2.0A max (TA = 25°C)
- Total Device Dissipation is 310mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 403°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 30 V | ||
| 1 A | ||
| 300 | ||
| 3 | ||
| 150 °C | ||
| 310 mW | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| NPN | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |