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MMBT489LT1G

High Current NPN Bipolar Transistor. ONSSPCTRNSTRN4B6U;

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Manufacturer:onsemi
Avnet Manufacturer Part #: MMBT489LT1G
Secondary Manufacturer Part#: MMBT489LT1G
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MMBT489LT1G is a high current surface mount PNP silicon switching transistor for load management in portable applications.

  • Collector-emitter voltage is 30VDC max (TA = 25°C)
  • Collector-base voltage is 50VDC max (TA = 25°C)
  • Emitter-base voltage is 5.0VDC max (TA = 25°C)
  • Collector current - continuous is 1.0ADC max (TA = 25°C)
  • Collector current - peak is -2.0A max (TA = 25°C)
  • Total Device Dissipation is 310mW max (TA = 25°C)
  • Thermal resistance junction-to-ambient is 403°C/W max (TA = 25°C)
  • Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
  • SOT-23 package
  • Junction temperature range from -55 to +150°C

Technical Attributes

Find Similar Parts

Description Value
30 V
1 A
300
3
150 °C
310 mW
AEC-Q101
SOT-23
Surface Mount
NPN
100

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
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