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FGD5T120SH

IGBT, 1200 V, 5 A FS Trench

Official logo for onsemi
Manufacturer:onsemi
Product Category: 分立器件, IGBT, IGBT單管
Avnet Manufacturer Part #: FGD5T120SH
Secondary Manufacturer Part#: FGD5T120SH
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

FGD5T120SH is an FS Trench IGBT. It offers the optimum performance for inrush current limitation, lighting and home appliance applications. The application includes inrush current limitation, lighting, and home appliances.

  • FS trench technology, positive temperature coefficient, high speed switching
  • 100% of the parts tested for ILM(1), high input impedance
  • Collector to emitter breakdown voltage is 1200V min (VGE = 0V, IC = 250µA, TC = 25°C)
  • Temperature coefficient of breakdown voltage is 1.2V/°C typ (VGE = 0V, IC = 250µA, TC = 25°C)
  • Collector cut-off current is 250µA max (VCE = VCES, VGE = 0V, TC = 25°C)
  • Input capacitance is 209pF typ (VCE = 30V, VGE = 0V, f = 1MHz, TC = 25°C)
  • Output capacitance is 11pF typ (VCE = 30V, VGE = 0V, f = 1MHz, TC = 25°C)
  • Collector to emitter saturation voltage is 4.5V typ (IC = 5A, VGE = 15V, TC = 150°C)
  • Rise time is 20.8ns typ (VCC = 600V, IC = 5A, RG = 30 ohm, VGE = 15V, inductive load, TC = 25°C)
  • TO-252 A03 package, operating junction temperature range from -55 to +150°C

Technical Attributes

Find Similar Parts

Description Value
2.9 V
1.2 kV
10
3
150 °C
69 W
TO-252 (DPAK)
Surface Mount

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
HTSN: 8541290095
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 77 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
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