4N35M
6-Pin DIP Package Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
Click image to enlarge
Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: 4N35M
Secondary Manufacturer Part#: 4N35M
-
RoHS 10 Compliant -
Tariff Charges
The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.
- Minimum current transfer ratio of 100% at IF=10A, Vce=10V
- Isolation voltage of 4.17KVAC
- Forward current (If) of 60mA
- Single channel
- UL 1577 and DIN-EN IEC60747-5-5 approved
- Operating temperature range from -40°C to 100°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Matte Tin | ||
| 260 | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541408000 |
| Schedule B: | 8541408000 |
Factory Lead Time: