PSMN1R0-30YLDX

PSMN1R0-30YLDX is a 300A logic level gate drive N-channel enhancement mode MOSFET in the LFPAK56 package. NextPowerS3 portfolio utilizing Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high-efficiency applications at high switching frequencies. Applications include on-board DC-to-DC solutions for server and telecommunications, secondary-side synchronous rectification in telecommunication applications, voltage regulator modules (VRM), point-of-load (POL) modules, power delivery for V-core, ASIC, DDR, GPU, VGA and system components, brushed and brushless motor control, power O-Ring.

• 300Amp capability, avalanche rated, 100 % tested at I(as) = 190Amps
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery; s-factor 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with 1µA leakage at 25°C
• Optimised for 4.5V gate drive, low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Power SO8 package
• Wave solderable; exposed leads for optimal visual solder inspection
• Drain-source voltage is 30V max (25°C to 175°C), drain current is 300A max (VGS = 10V; Tmb = 25°C)
• 4 terminals SOT669 package, junction temperature range from -55 to 175°C