PMGD290XN,115
Transistor MOSFET Array Dual N-CH 20V 0.86A 6-Pin SC-88 T/R
- RoHS 10 Compliant
- Tariff Charges
Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Low conduction losses due to low on-state resistance
- Saves PCB space due to small footprint (40 % smaller than SOT23)
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for low gate driv
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 0.86 | ||
| 350 | ||
| 20 | ||
| 6 | ||
| 150 °C | ||
| 410 | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |