PBSS5160T,215
Trans GP BJT PNP 60V 1A 3-Pin TO-236AB T/R
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T.
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency due to less heat generation
- Reduces Printed-Circuit Board (PCB) area required
- Cost-effective replacement for medium power transistors BCP52 and BCX52
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 | ||
| 200 | ||
| 3 | ||
| 150 °C | ||
| 1.25 | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| PNP | ||
| 220 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412100 |
| Schedule B: | 85412100 |
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