PBSS4160DS,115
Trans GP BJT NPN 60V 1A 6-Pin TSOP T/R
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS.
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 V | ||
| 1 A | ||
| 250 | ||
| 6 | ||
| 150 °C | ||
| 700 mW | ||
| AEC-Q101 | ||
| SOT-457 | ||
| Surface Mount | ||
| Dual NPN | ||
| 220 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
Factory Lead Time: