PBHV9115T,215
Trans GP BJT PNP 150V 1A 3-Pin TO-236AB T/R
PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT23 (TO-263AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T.
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 150 | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 300 | ||
| SOT-23 | ||
| Surface Mount | ||
| PNP | ||
| 115 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541100080 |
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