NX7002BKXBZ
Transistor MOSFET Array Dual N-CH 60V 330mA 8-Pin DFN1010B-6 T/R
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Logic-level compatible
- Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 330 | ||
| 2.8 | ||
| 60 | ||
| 8 | ||
| 150 °C | ||
| 320 | ||
| SOT-1216 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |
Factory Lead Time: