NX3008NBKV,115
Transistor MOSFET Array Dual N-CH 30V 400mA 6-Pin SOT-666 T/R
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Very fast switching
- Low threshold voltage
- Trench MOSFET technology
- ESD protection up to 2 kV
- AEC-Q101 qualified
Technical Attributes
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| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 400 | ||
| 1.4 | ||
| 30 | ||
| 6 | ||
| 150 °C | ||
| 500 | ||
| AEC-Q101 | ||
| SOT-666 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412100 |
| Schedule B: | 85412100 |
Factory Lead Time: