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BSH103BKR

Power MOSFET, N Channel, 30 V, 1 A, 0.23 ohm, SOT-23, Surface Mount

Official logo for Nexperia
Manufacturer:Nexperia
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSH103BKR
Secondary Manufacturer Part#: BSH103BKR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

BSH103BKR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.

  • Low threshold voltage, very fast switching
  • ElectroStatic Discharge (ESD) protection > 2kV HBM
  • Drain-source voltage is 30V max at Tj = 25°C
  • Gate-source voltage is 12V maximum
  • Drain current is 1A max at VGS = 4.5V; Tamb = 25°C
  • Peak drain current is 4A max at Tamb = 25°C; single pulse; tp = 10µs
  • Total power dissipation is 330mW max at Tamb = 25°C
  • Source current is 0.4A max at Tamb = 25°C
  • Total gate charge is 0.8nC typ at VDS = 15V; ID = 1A; VGS = 4.5V; Tj = 25°C
  • Ambient temperature range from -55 to 150°C

Technical Attributes

Find Similar Parts

Description Value
N Channel
1
270 mOhm
30
1.25
150 °C
480
SOT-23
Surface Mount

ECCN / UNSPSC / COO

Description Value
Country of Origin: null
ECCN: EAR99
HTSN: null
Schedule B: null
In Stock :  0
Additional inventory
Factory Lead Time: 210 Weeks
Price for: Each
Quantity:
Min:15000  Mult:3000  
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