BSH103BKR
Power MOSFET, N Channel, 30 V, 1 A, 0.23 ohm, SOT-23, Surface Mount
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Manufacturer:Nexperia
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSH103BKR
Secondary Manufacturer Part#: BSH103BKR
- RoHS 10 Compliant
- Tariff Charges
BSH103BKR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- ElectroStatic Discharge (ESD) protection > 2kV HBM
- Drain-source voltage is 30V max at Tj = 25°C
- Gate-source voltage is 12V maximum
- Drain current is 1A max at VGS = 4.5V; Tamb = 25°C
- Peak drain current is 4A max at Tamb = 25°C; single pulse; tp = 10µs
- Total power dissipation is 330mW max at Tamb = 25°C
- Source current is 0.4A max at Tamb = 25°C
- Total gate charge is 0.8nC typ at VDS = 15V; ID = 1A; VGS = 4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 1 | ||
| 270 mOhm | ||
| 30 | ||
| 1.25 | ||
| 150 °C | ||
| 480 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | null |