MT53E768M32D2ZW-046 WT:C
DRAM, Mobile LPDDR4, 24 Gbit, 768M x 32bit, 2.133 GHz, TFBGA, 200 Pins
MT53E768M32D2ZW-046 WT:C is a mobile LPDDR4 SDRAM. The 12Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability
- Programmable VSS (ODT) termination, single-ended CK and DQS support
- Operating voltage is 1.10V VDD2/0.60V VDDQ or 1.10V VDDQ, 468ps cycle time
- 3GB (24Gb) total density, 4266Mb/s data rate per pin
- Operating temperature range from -25°C to +85°C, 200-ball TFBGA package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.133 GHz | ||
| Mobile LPDDR4 | ||
| TFBGA | ||
| Surface Mount | ||
| 768M x 32bit | ||
| 200 | ||
| 85 °C | ||
| -25 °C | ||
| 1.1 V V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542320036 |
| Schedule B: | 8542320023 |
Factory Lead Time: