MT53E256M32D1KS-046 AIT:L
DRAM, AEC-Q100, LPDDR4, 8 Gbit, 256M x 32bit, 2.133 GHz, VFBGA
MT53E256M32D1KS-046 AIT:L is an automotive LPDDR4X/LPDDR4 SDRAM. The 8Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL =16/32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
- 256 Meg x 32 (2 channels x 16 I/O) array configuration
- 200-ball VFBGA package, AEC-Q100 qualified
- Operating temperature range from -40°C to +95°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.133 GHz | ||
| LPDDR4 | ||
| VFBGA | ||
| Surface Mount | ||
| 256M x 32bit | ||
| 95 °C | ||
| -40 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8542320032 |
| Schedule B: | 8542320015 |
Factory Lead Time: