MT53E1G16D1ZW-046 AIT:C
DRAM, LPDDR4, 16 Gbit, 1G x 16bit, TFBGA
MT53E1G16D1ZW-046 AIT:C is a mobile LPDDR4 SDRAM. The mobile low-power DDR4 SDRAM is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
- 2GB (16Gb) total density, 4266Mb/s data rate per pin
- 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
- 200-ball TFBGA package, AEC-Q100 automotive qualified
- Operating temperature from -40°C to +95°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.133 GHz | ||
| LPDDR4 | ||
| TFBGA | ||
| Surface Mount | ||
| 1G x 16bit | ||
| 200 | ||
| 95 °C | ||
| -40 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | null |
| Schedule B: | 8542320023 |
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