MT47H64M8SH-25E:H
DRAM, DDR2, 512 Mbit, 64M x 8bit, 400 MHz, TFBGA, 60 Pins
MT47H64M8SH-25E:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
- 64M8 configuration, tCK = 2.5ns, CL = 5 cycle time
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible), differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture, duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK, 4 internal banks for concurrent operation
- Programmable CAS latency (CL), posted CAS additive latency (AL)
- Adjustable data-output drive strength, on-die termination (ODT)
- Package style is 60-ball FBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 14 Bit | ||
| 8 Bit | ||
| 512 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 400 MHz | ||
| 75 mA | ||
| 0.4 ns | ||
| Surface Mount | ||
| 8 Bit | ||
| 8 Bit | ||
| 1.8 V | ||
| 0 to 85 °C | ||
| 64M x 8 | ||
| 60FBGA | ||
| 60 | ||
| 8 x 10 x 0.975 | ||
| Commercial | ||
| FBGA | ||
| DDR2 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | PARTS... |
| Schedule B: | PARTS... |