MT41K128M16JT-125:K

MT41K128M16JT-125:K is a DDR3L SDRAM. This DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.

• Differential clock inputs (CK, CK#), 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL), programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Self-refresh temperature (SRT), automatic self refresh (ASR)
• Write levelling, multipurpose register, output driver calibration
• 128 Meg x 16 configuration
• Timing – cycle time: 1.25ns at CL = 11 (DDR3-1600)
• 96-ball 8mm x 14mm FBGA package
• Commercial operating temperature range from 0°C to +95°C