IS61WV51216EDBLL-10BLI-TR

The IS61WV51216 are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE\ is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE\ and OE\. The active LOW Write Enable (WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The device is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).

• High-speed access times:8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
  • Vdd 1.65V to 2.2V speed = 2Ons for Vdd 1.65V to 2.2V
  • Vdd 2.4V to 3.6V speed = 1 Ons for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V ± 5%
• Packages available:
  • 48-ball miniBGA (9mm x 11mm)
  • 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes