IS61LPS25636A-200TQLI

The ISSI IS61LPS25636A is a highspeed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPS25636A is organized as 262,144 words by 36 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAMcore, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs.

• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for BGA package
• Power Supply LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
• JEDEC 100-Pin QFP, 119-ball BGA, and 165-ball BGA packages
• Lead-free available