IS29GL128-70SLET
Flash Memory, Parallel NOR, 128 Mbit, 16M x 8bit / 8M x 16bit, CFI, Parallel, TSOP, 56 Pins
The IS29GL128 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for embedded applications that require higher density, better performance and lower power consumption.
- Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and write operations
- High performance
- Access times as fast as 70 ns
- Vio Input/Output 1.65 to 3.6 volts
- All input levels (address, control, and DQ input levels) and outputs are determined by voltage on Vio input. Vio range is 1.65 to Vcc
- 8-word/16-byte page read buffer
- 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
- Secured Silicon Sector region-
- 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
- Can be programmed and locked at the factory or by the customer Flexible Sector Architecture:
- Uniform Sector Models w/ High and Low Protect: One hundred and twenty-eight uniform 32Kword/64Kbyte sectors
- Top and Bottom Boot Sector Models: Eight 8-Kbyte boot sectors on Top or Bottom
Technical Attributes
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| Description | Value | |
|---|---|---|
| 70 ns | ||
| 23, 24 Bit | ||
| Sectored | ||
| Symmetrical | ||
| Yes | ||
| NOR | ||
| 128 MB | ||
| No | ||
| Yes | ||
| Parallel | ||
| Matte Tin | ||
| Top | ||
| 260 °C | ||
| 150/Chip s | ||
| 45 mA | ||
| 3.6 V | ||
| 20 ns | ||
| 0.2/Word ms | ||
| 70 ns | ||
| 128 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 56 | ||
| 8, 16 Bit | ||
| 16, 8 MWords | ||
| 35 ns | ||
| -40 to 105 °C | ||
| 105 °C | ||
| -40 °C | ||
| 56TSOP-I | ||
| 10/15 mA | ||
| 56 | ||
| 14 x 20 x 1 mm | ||
| 20 mA | ||
| 2.7 to 3.6 V | ||
| No | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | 3A991.b.1.a |
| HTSN: | 8542320071 |
| Schedule B: | 8542330000 |