DMT3006LFVQ-13
Power MOSFET, N Channel, 30 V, 60 A, 7 Milliohms, PowerDI3333, 8 Pins, Surface Mount
Manufacturer:Diodes Incorporated
Avnet Manufacturer Part #: DMT3006LFVQ-13
Secondary Manufacturer Part#: DMT3006LFVQ-13
- RoHS 10 Compliant
- Tariff Charges
DMT3006LFVQ-13 is a N-channel enhancement mode MOSFET in an 8 pin PowerDI3333 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include power management functions and analogue switch.
- Dain-source voltage is 30V
- Gate-source voltage is ±20V
- Pulsed drain current is 90A
- Total power dissipation is 1W
- Low RDS(ON) ensures on-state losses are minimized
- 100% unclamped inductive switching ensures more reliable and robust end application
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Qualified to AEC-Q101 standards for high reliability
- PPAP capable
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 60 | ||
| 7 mOhm | ||
| 30 | ||
| 3 | ||
| 8 | ||
| 150 °C | ||
| 2 | ||
| AEC-Q101 | ||
| PowerDI 3333 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |