DGD2190MS8-13

DGD2190MS8-13 is a high-voltage/high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2190M’s high side to switch to 600V in a bootstrap operation under high dV/dt conditions. It is logic input is compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross-conduction. The application includes DC-DC converters, DC-AC inverters, AC-DC power supplies, motor controls, and class D power amplifiers.

• Floating high-side driver in bootstrap operation to 600V
• Drives two N-Channel MOSFETs or IGBTs in a half-bridge configuration
• Logic input (HIN and LIN) 3.3V capability, Schmitt triggered logic inputs with internal pull-down
• Undervoltage lockout for high and low-side drivers
• Moulded plastic, green moulding compound, UL flammability classification rating 94V-0 case material
• High-side floating supply voltage range from -0.3 to +624V (TA = +25°C)
• Power dissipation linear derating factor is 0.625W (TA = +25°C)
• Thermal resistance, junction to ambient is 200°C/W (TA = +25°C)
• Turn-on rise time is 25ns typ (VS = 0V, (VBIAS (VCC, VBS) = 15V, CL = 1000pF, TA = +25°C)
• SO-8 package, ambient temperature range from -40 to +125°C