SFH 4715AS

The SFH4715AS from Osram is an OSLON black series high efficiency (850nm), 90°, high power infrared emitter. This has low thermal resistance (maximum 9K/W) and superior corrosion robustness. The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, stress test qualification for automotive grade discrete semiconductors. It has 11/14ns rise and fall time of Ie (10% and 90% of Ie max) (IF = 3A, RL = 50 ohm), 3.2V (= 3.6V) forward voltage (IF = 1A, tp = 10ms), 3.35V (= 3.85V) forward voltage (IF = 1.5A, tp = 100µs), 3.8V (= 4.7V) forward voltage (IF = 3A, tp = 100µs). The temperature coefficient of Ie or Fe (IF = 1A, tp = 10ms) is -0.3%/K, temperature coefficient of VF (IF = 1A, tp = 10ms) is -2mV/K, temperature coefficient of wavelength (IF = 1A, tp = 10ms) is 0.3nm/K. It is suitable for use in CCTV surveillance, eye tracking, gesture recognition, safety systems and CCTV.

• 780 (= 500)mW/sr radiant intensity at IF= 1A, tp= 10ms, IR light source with high efficiency
• 1V reverse voltage, 1500mA forward current, 3A surge current (tp = 2ms, D = 0)
• Power consumption (Ptot) is 5.8W, double stack emitter
• ESD withstand voltage is 2KV according to ANSI/ ESDA/ JEDEC JS-001 - HBM
• 860nm peak wavelength (IF = 1A, tp = 10ms), 850nm centroid wavelength (IF = 1A, tp = 10ms)
• Total radiant flux is 2000mW (IF = 1.5A, tp= 100µs)/1340mW (IF=1A, tp= 10ms)
• 30nm spectral bandwidth at 50% of Imax (IF = 1A, tp = 10ms)
• ±45° half angle, dimensions of active chip area is 1mm x 1mm (L x W)
• Operating temperature range from -40°C to 125°C