BP 104 FAS-Z
Photo Diode, AEC-Q101, 60° Half Sensitivity, 2nA Dark Current, 880nm, SMD-2 Pins
Click image to enlarge
Manufacturer:ams OSRAM
Product Category:
Optoelectronics, Infrared - IR Components, Photodiodes
Avnet Manufacturer Part #: BP 104 FAS-Z
Secondary Manufacturer Part#: BP 104 FAS-Z
-
RoHS 10 Compliant -
Tariff Charges
Silicon PIN Photodiode with Daylight Blocking Filter
Especially suitable for applications from 730 nm to 1100 nm Short switching time (typ. 20 ns) Suitable for SMT The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Matte Tin | ||
| 260 | ||
| 30 nA | ||
| 20 ns | ||
| 15 to 250 ns | ||
| 20 ns | ||
| 15 to 250 ns | ||
| Surface Mount | ||
| MSL 4 - 72 hours | ||
| -40 to 100 °C | ||
| 2SMT | ||
| 0.65 A/W | ||
| Si | ||
| 2 | ||
| 4.5 x 4 x 1.2 mm | ||
| SMT | ||
| Chip | ||
| 880 nm |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541406050 |
| Schedule B: | 8541406050 |
Factory Lead Time: